onsemi N型沟道 增强型 MOSFET, Vds=650 V, 40 A, TO-220, 通孔安装, 3引脚

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¥1,641.95

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¥1,855.40

(含税)

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50 - 50RMB32.839RMB1,641.95
100 - 150RMB32.182RMB1,609.10
200 +RMB31.538RMB1,576.90

* 参考价格

RS 库存编号:
178-4258
制造商零件编号:
NTPF082N65S3F
制造商:
onsemi
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品牌

onsemi

槽架类型

N型

产品类型

MOSFET

最大连续漏极电流 Id

40A

最大漏源电压 Vd

650V

包装类型

TO-220

安装类型

通孔

引脚数目

3

最大漏源电阻 Rd

82mΩ

通道模式

增强

典型栅极电荷 Qg @ Vgs

70nC

最低工作温度

-55°C

最大栅源电压 Vgs

30 V

正向电压 Vf

1.3V

最大功耗 Pd

48W

最高工作温度

150°C

标准/认证

No

高度

16.12mm

宽度

4.9 mm

长度

10.63mm

汽车标准

COO (Country of Origin):
CN
SUPERFET III MOSFET is ON Semiconductor’s brand−new high voltage super−junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on−resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate.

Features

700 V @ TJ = 150 oC

Ultra Low Gate Charge (Typ. Qg = 70 nC)

Low Effective Output Capacitance (Typ. Coss(eff.) = 680 pF)

Optimized Capacitance

Excellent body diode performance (low Qrr, robust body diode)

Typ. RDS(on) = 70 mΩ

Higher system reliability at low temperature operation

Lower switching loss

Lower switching loss

Lower peak Vds and lower Vgs oscillation

Higher system reliability in LLC and Phase shift full bridge Circuit

Applications

Telecommunication

Cloud system

Industrial

End Products

Telecom power

Server power

Solar / UPS

EV charger