onsemi PWM控制器, 次级侧同步整流器, 最高1 MHz, 2 a 、 7 a, 11 V输出, 8针, SOIC, 贴片安装
- RS 库存编号:
- 178-4356
- 制造商零件编号:
- NCP4306AADZZZADR2G
- 制造商:
- onsemi
可享批量折扣
小计（1 卷，共 2500 件）*
¥7,452.50
(不含税)
¥8,422.50
(含税)
暂时缺货
- 在 2026年6月29日 发货
**需要更多产品？**输入您需要的数量，点击“查看送货日期”，查看库存和送货信息。
单位 | 每单位 | 每卷* |
|---|---|---|
| 2500 - 2500 | RMB2.981 | RMB7,452.50 |
| 5000 - 22500 | RMB2.861 | RMB7,152.50 |
| 25000 + | RMB2.804 | RMB7,010.00 |
* 参考价格
- RS 库存编号:
- 178-4356
- 制造商零件编号:
- NCP4306AADZZZADR2G
- 制造商:
- onsemi
产品技术参数
产品技术参数资料
法例与合规
产品详细信息
通过选择一个或多个属性来查找类似产品。
选择全部 | 属性 | 值 |
|---|---|---|
| 品牌 | onsemi | |
| 最大开关频率 | 1 MHz | |
| 输出电压 | 11 V | |
| 输出电流 | 2 a 、 7 a | |
| 输出数目 | 1 | |
| 安装类型 | 贴片 | |
| 封装类型 | SOIC | |
| 引脚数目 | 8 | |
| 尺寸 | 5 x 4 x 1.5mm | |
| PWM控制器类型 | 次级侧同步整流器 | |
| 长度 | 5mm | |
| 宽度 | 4mm | |
| 高度 | 1.5mm | |
| 最大工作电源电压 | 35 V | |
| 最高工作温度 | +125 °C | |
| 最低工作温度 | -40 °C | |
| 选择全部 | ||
|---|---|---|
品牌 onsemi | ||
最大开关频率 1 MHz | ||
输出电压 11 V | ||
输出电流 2 a 、 7 a | ||
输出数目 1 | ||
安装类型 贴片 | ||
封装类型 SOIC | ||
引脚数目 8 | ||
尺寸 5 x 4 x 1.5mm | ||
PWM控制器类型 次级侧同步整流器 | ||
长度 5mm | ||
宽度 4mm | ||
高度 1.5mm | ||
最大工作电源电压 35 V | ||
最高工作温度 +125 °C | ||
最低工作温度 -40 °C | ||
- COO (Country of Origin):
- PH
The NCP4306 is high performance driver tailored to control a synchronous rectification MOSFET in switch mode power supplies. Thanks to its high performance drivers and versatility, it can be used in various topologies such as DCM or CCM flyback, quasi resonant flyback, forward and half bridge resonant LLC.
Allows for proper timing of SR MOSFET turn on and turn off
Maximizes conduction time of the MOSFET to increase efficiency
Allows direct connection of CS input to MOSFET drain in flyback applications
Improves performance for applications working in deep CCM
Enters the IC into a low consumption standby mode
Prevents accidental MOSFET turn on or turn off due to ringing
Enhanced Operation for USB-PD Applications
Fast turn off of MOSFET for optimized conduction period
Increased stability coming in and out of Light Load
Wide output operating voltages
Maximizes conduction time of the MOSFET to increase efficiency
Allows direct connection of CS input to MOSFET drain in flyback applications
Improves performance for applications working in deep CCM
Enters the IC into a low consumption standby mode
Prevents accidental MOSFET turn on or turn off due to ringing
Enhanced Operation for USB-PD Applications
Fast turn off of MOSFET for optimized conduction period
Increased stability coming in and out of Light Load
Wide output operating voltages